JPS6445162U - - Google Patents

Info

Publication number
JPS6445162U
JPS6445162U JP13534487U JP13534487U JPS6445162U JP S6445162 U JPS6445162 U JP S6445162U JP 13534487 U JP13534487 U JP 13534487U JP 13534487 U JP13534487 U JP 13534487U JP S6445162 U JPS6445162 U JP S6445162U
Authority
JP
Japan
Prior art keywords
electrode
sample
plasma
insulating material
grounded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13534487U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13534487U priority Critical patent/JPS6445162U/ja
Publication of JPS6445162U publication Critical patent/JPS6445162U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP13534487U 1987-09-04 1987-09-04 Pending JPS6445162U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13534487U JPS6445162U (en]) 1987-09-04 1987-09-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13534487U JPS6445162U (en]) 1987-09-04 1987-09-04

Publications (1)

Publication Number Publication Date
JPS6445162U true JPS6445162U (en]) 1989-03-17

Family

ID=31394883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13534487U Pending JPS6445162U (en]) 1987-09-04 1987-09-04

Country Status (1)

Country Link
JP (1) JPS6445162U (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402471B2 (en) 1993-12-22 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US7402471B2 (en) 1993-12-22 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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